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Power Transistors 2SD2215, 2SD2215A Silicon NPN triple diffusion planar type Unit mm 7.0 0.3 3.5 0.2 For power amplification 3.0 0.2 Features High collector to base voltage VCBO 1.1 0.1 0.85 0.1 I type package enabling direct soldering of the radiating fin to 0.75 0.1 0.4 0.1 the printed circuit board, etc. of small electronic equipment. 2.3 0.2 Absolute Maximum Ratings (TC=25 C) 4.6 0.4 Parameter Symbol Ratings Unit 1 2 3 1 Base 2 Collector Collector to 2SD2215 350 3 Emitter VCBO V I Type Package base voltage 2SD2215A 400 Unit mm Collector to 2SD2215 250 7.0 0.3 3.5 0.2 VCEO V 2.0 0.2 0 to 0.15 emitter voltage 2SD2215A 300 Emitter to base voltage VEBO 5 V 3.0 0.2 Peak collector current ICP 1.5 A Collector current IC 0.75 A 2.5 Collector power TC=25 C 15 PC W 0.75 0.1 0.5 max. 0.9 0.1 dissipation Ta=25 C 1.3 1.... See More ⇒

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