View 2sd2215 datasheet:

Power Transistors2SD2215, 2SD2215ASilicon NPN triple diffusion planar typeUnit: mm7.0 0.3 3.5 0.2For power amplification3.0 0.2Features High collector to base voltage VCBO1.1 0.1 0.85 0.1 I type package enabling direct soldering of the radiating fin to0.75 0.1 0.4 0.1the printed circuit board, etc. of small electronic equipment.2.3 0.2Absolute Maximum Ratings (TC=25C)4.6 0.4Parameter Symbol Ratings Unit1 2 3 1:Base2:CollectorCollector to 2SD2215 3503:EmitterVCBO VI Type Packagebase voltage 2SD2215A 400Unit: mmCollector to 2SD2215 250 7.0 0.3 3.5 0.2VCEO V 2.0 0.2 0 to 0.15emitter voltage 2SD2215A 300Emitter to base voltage VEBO 5 V3.0 0.2Peak collector current ICP 1.5 ACollector current IC 0.75 A2.5Collector power TC=25 C 15PC W0.75 0.1 0.5 max. 0.9 0.1dissipation Ta=25 C 1.3 1.

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