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High Frequency FETs 2SK690 2SK690 GaAs N-Channel MES Unit mm For UHF medium-output power amplification 1.5 0.1 4.5 0.1 1.6 0.2 Features Large collector dissipation PC 45 Downsizing of sets by mini power package and automatic insertion by magazine packing are available. 0.4 0.08 0.4 0.04 0.5 0.08 1.5 0.1 3.0 0.15 3 2 1 Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Rating Unit 1 Gate marking 2 Source Drain-Source voltage VDS 10 V 3 Drain Gate-Source voltage VGS 6 V EIAJ SC-62 Drain current ID 0.6 A Mini-Power Type Package (3-pin) Gate current IG 1 mA Internal Connection Allowable power dissipation PD * 1 W D Channel temperature Tch 150 C 1k G Storage temperature Tstg 55 to +150 C Zener Di 12V Operating ambient temperature Topr 35 to + 85 C * PC board Copper foil area of drain portion... See More ⇒

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