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View 2sk690 datasheet:

2sk6902sk690

High Frequency FETs 2SK6902SK690GaAs N-Channel MESUnit : mmFor UHF medium-output power amplification1.5 0.14.5 0.11.6 0.2 Features Large collector dissipation PC45 Downsizing of sets by mini power package and automatic insertionby magazine packing are available.0.4 0.080.4 0.040.5 0.081.5 0.13.0 0.153 2 1 Absolute Maximum Ratings (Ta = 25C)Parameter Symbol Rating Unit1 : Gatemarking2 : SourceDrain-Source voltage VDS 10 V3 : DrainGate-Source voltage VGS 6 VEIAJ : SC-62Drain current ID 0.6 A Mini-Power Type Package (3-pin)Gate current IG 1 mA Internal ConnectionAllowable power dissipation PD * 1 WDChannel temperature Tch 150 C1kGStorage temperature Tstg 55 to +150 CZener Di12VOperating ambient temperature Topr 35 to + 85 C* PC board : Copper foil area of drain portion

 

Keywords - ALL TRANSISTORS DATASHEET

 2sk690.pdf Design, MOSFET, Power

 2sk690.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sk690.pdf Database, Innovation, IC, Electricity

 

 
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