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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N5415; 2N5416 PNP high-voltage transistors 1997 May 21 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP high-voltage transistors 2N5415; 2N5416 FEATURES PINNING Low current (max. 200 mA) PIN DESCRIPTION High voltage (max. 300 V). 1 emitter 2 base APPLICATIONS 3 collector, connected to case Switching and linear amplification in military, industrial and consumer equipment. 1 handbook, halfpage 3 2 DESCRIPTION 2 PNP high-voltage transistor in a TO-39 metal package. 1 3 MAM334 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter 2N5415 --200 V 2N5416 --350 V VCEO collector-emitter voltage op... See More ⇒

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