All Transistors. Equivalents Search

View bf1100 bf1100r 1 detailed specification:

DISCRETE SEMICONDUCTORS DATA SHEET BF1100; BF1100R Dual-gate MOS-FETs 1995 Apr 25 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Philips Semiconductors Product specification Dual-gate MOS-FETs BF1100; BF1100R and substrate interconnected and an internal bias circuit to FEATURES ensure good cross-modulation performance during AGC. Specially designed for use at 9 to 12 V supply voltage Short channel transistor with high forward transfer CAUTION admittance to input capacitance ratio The device is supplied in an antistatic package. The Low noise gain controlled amplifier up to 1 GHz gate-source input must be protected against static Superior cross-modulation performance during AGC. discharge during transport or handling. APPLICATIONS PINNING VHF and UHF applications such as television tuners and PIN SYMBO... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 bf1100 bf1100r 1.pdf Design, MOSFET, Power

 bf1100 bf1100r 1.pdf RoHS Compliant, Service, Triacs, Semiconductor

 bf1100 bf1100r 1.pdf Database, Innovation, IC, Electricity