View bf410a 410b 410c 410d detailed specification:

bf410a_410b_410c_410dbf410a_410b_410c_410d

DISCRETE SEMICONDUCTORS DATA SHEET BF410A to D N-channel silicon field-effect transistors December 1990 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon field-effect transistors BF410A to D DESCRIPTION PINNING - TO-92 VARIANT Asymmetrical N-channel planar 1 = drain epitaxial junction field-effect 2 = source transistors in a plastic TO-92 variant; 3 = gate intended for applications up to the VHF range. These FETs can be supplied in four IDSS groups. Special features are the low feedback capacitance and the low 1 noise figure. Thanks to these special handbook, halfpage 2 features the BF410 is very suitable for 3 d g applications such as the RF stages in s FM portables (type A), car radios MAM257 (type B) and mains radios (type C) or the mixer stage (type D). Fig.1 Simplified... See More ⇒

 

Keywords - ALL TRANSISTORS SPECS

 bf410a 410b 410c 410d.pdf Design, MOSFET, Power

 bf410a 410b 410c 410d.pdf RoHS Compliant, Service, Triacs, Semiconductor

 bf410a 410b 410c 410d.pdf Database, Innovation, IC, Electricity