View bu508df datasheet:

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DF GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope with integrated efficiency diode, primarily for use in horizontal deflection circuits of colour television receivers. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V VCEO Collector-emitter voltage (open base) - 700 V IC Collector current (DC) - 8 A ICM Collector current peak value - 15 A Ptot Total power dissipation Ths 25 C - 34 W VCEsat Collector-emitter saturation voltage IC = 4.5 A; IB = 1.6 A - 1.0 V ICsat Collector saturation current f = 16kHz 4.5 - A VF Diode forward voltage IF = 4.5 A 1.6 2.0 V tf Fall time ICsat = 4.5 A; f = 16kHz 0.7 - s PINNING - SOT199 PIN CONFIGURATION SYMBOL PI... See More ⇒

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