View bu508df datasheet:

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DF GENERAL DESCRIPTIONHigh voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope with integrated efficiencydiode, primarily for use in horizontal deflection circuits of colour television receivers.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emitter voltage peak value VBE = 0 V - 1500 VVCEO Collector-emitter voltage (open base) - 700 VIC Collector current (DC) - 8 AICM Collector current peak value - 15 APtot Total power dissipation Ths 25 C - 34 WVCEsat Collector-emitter saturation voltage IC = 4.5 A; IB = 1.6 A - 1.0 VICsat Collector saturation current f = 16kHz 4.5 - AVF Diode forward voltage IF = 4.5 A 1.6 2.0 Vtf Fall time ICsat = 4.5 A; f = 16kHz 0.7 - sPINNING - SOT199 PIN CONFIGURATION SYMBOLPI

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