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View 2sk1629-e1-e detailed specification:

Preliminary Datasheet 2SK1629-E1-E R07DS1197EJ0200 500V - 30A - MOS FET Rev.2.00 High Speed Power Switching Mar 26, 2014 Features Low on-resistance RDS(on) = 0.22 typ. (at ID = 15 A, VGS= 10 V, Ta = 25 C) High speed switching Low drive current Suitable for switching regulator and DC-DC converter Outline RENESAS Package code PRSS0003ZC-A (Package name TO-264) D 1. Gate G 2. Drain 3. Source 1 S 2 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to Source voltage VDSS 500 V Gate to Source voltage VGSS 30 V Drain current ID 30 A Drain peak current ID (pulse) Note1 120 A Body-Drain diode reverse Drain current IDR 30 A Note2 Channel dissipation Pch 200 W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25 ... See More ⇒

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