All Transistors. Datasheet

 

View 2sk1629-e1-e datasheet:

2sk1629-e1-e2sk1629-e1-e

Preliminary Datasheet 2SK1629-E1-E R07DS1197EJ0200500V - 30A - MOS FET Rev.2.00High Speed Power Switching Mar 26, 2014Features Low on-resistance RDS(on) = 0.22 typ. (at ID = 15 A, VGS= 10 V, Ta = 25C) High speed switching Low drive current Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0003ZC-A(Package name:TO-264)D1. GateG2. Drain3. Source1S23Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitDrain to Source voltage VDSS 500 VGate to Source voltage VGSS 30 VDrain current ID 30 ADrain peak current ID (pulse) Note1 120 ABody-Drain diode reverse Drain current IDR 30 ANote2Channel dissipation Pch 200 WChannel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25

 

Keywords - ALL TRANSISTORS DATASHEET

 2sk1629-e1-e.pdf Design, MOSFET, Power

 2sk1629-e1-e.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sk1629-e1-e.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.