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2SK3229 Silicon N Channel MOS FET High Speed Power Switching REJ03G1095-0200 (Previous ADE-208-766) Rev.2.00 Sep 07, 2005 Features Low on-resistance RDS (on) = 6 m typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0003AE-A (Package name TO-220C FM) D 1. Gate 2. Drain G 3. Source S 1 2 3 Rev.2.00 Sep 07, 2005 page 1 of 3 2SK3229 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Value Unit Drain to source voltage VDSS 80 V Gate to source voltage VGSS 20 V Drain current ID 60 A Drain peak current ID (pulse) Note 1 240 A Body-drain diode reverse drain current IDR 60 A Avalanche current IAP Note 3 50 A Avalanche energy EAR Note 3 181 mJ Channel dissipation Pch Note 2 35 W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes ... See More ⇒

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