View 2sk3229 datasheet:

2SK3229 Silicon N Channel MOS FET High Speed Power Switching REJ03G1095-0200 (Previous: ADE-208-766) Rev.2.00 Sep 07, 2005 Features Low on-resistance RDS (on) = 6 m typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AE-A(Package name: TO-220CFM)D1. Gate2. DrainG3. SourceS123Rev.2.00 Sep 07, 2005 page 1 of 3 2SK3229 Absolute Maximum Ratings (Ta = 25C) Item Symbol Value UnitDrain to source voltage VDSS 80 VGate to source voltage VGSS 20 VDrain current ID 60 ADrain peak current ID (pulse) Note 1 240 ABody-drain diode reverse drain current IDR 60 AAvalanche current IAP Note 3 50 AAvalanche energy EAR Note 3 181 mJChannel dissipation Pch Note 2 35 WChannel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes:

Keywords - ALL TRANSISTORS DATASHEET

 2sk3229.pdf Design, MOSFET, Power

 2sk3229.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sk3229.pdf Database, Innovation, IC, Electricity