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View h5n5005pl-e0-e detailed specification:

h5n5005pl-e0-eh5n5005pl-e0-e

Preliminary Datasheet H5N5005PL-E0-E R07DS1199EJ0300 500V - 60A - MOS FET Rev.3.00 High Speed Power Switching Mar 25, 2014 Features Low on-resistance RDS(on) = 0.070 typ. (at ID = 30 A, VGS= 10 V, Ta = 25 C) Low leakage current High speed switching Low gate charge Avalanche ratings Built-in fast recovery diode Outline RENESAS Package code PRSS0003ZC-A (Package name TO-264) D 1. Gate G 2. Drain 3. Source 1 S 2 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to Source voltage VDSS 500 V Gate to Source voltage VGSS 30 V Drain current ID 60 A Drain peak current ID (pulse) Note1 240 A Body-Drain diode reverse Drain current IDR 60 A Body-Drain diode reverse Drain peak current IDR (pulse) Note1 240 A Avalanche current IAP Note3 30 A Note2 Channel dissipation Pch 270 W Channel to case t... See More ⇒

 

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