View h5n5005pl-e0-e datasheet:

Preliminary Datasheet H5N5005PL-E0-E R07DS1199EJ0300500V - 60A - MOS FET Rev.3.00High Speed Power Switching Mar 25, 2014Features Low on-resistance RDS(on) = 0.070 typ. (at ID = 30 A, VGS= 10 V, Ta = 25C) Low leakage current High speed switching Low gate charge Avalanche ratings Built-in fast recovery diode Outline RENESAS Package code: PRSS0003ZC-A(Package name:TO-264)D1. GateG2. Drain3. Source1 S23Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitDrain to Source voltage VDSS 500 VGate to Source voltage VGSS 30 VDrain current ID 60 ADrain peak current ID (pulse) Note1 240 ABody-Drain diode reverse Drain current IDR 60 ABody-Drain diode reverse Drain peak current IDR (pulse) Note1 240 AAvalanche current IAP Note3 30 ANote2Channel dissipation Pch 270 WChannel to case t

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