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View r07ds0159ej rjh60d2dpe detailed specification:

Preliminary Datasheet RJH60D2DPE R07DS0159EJ0300 Silicon N Channel IGBT Rev.3.00 Application Inverter Nov 16, 2010 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer technology High speed switching tf = 80 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 12 A, Rg = 5 , Ta = 25 C, inductive load) Outline RENESAS Package code PRSS0004AE-B (Package name LDPAK (S)-(1) ) C 4 1. Gate 2. Collector G 3. Emitter 1 2 4. Collector 3 E Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to emitter voltage / diode reverse voltage VCES / VR 600 V Gate to emitter voltage VGES 30 V Collector current Tc = 25 C IC 25 A Tc... See More ⇒

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