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View r07ds0347ej rjp30e2dpp detailed specification:

Preliminary Datasheet RJP30E2DPP-M0 R07DS0347EJ0200 Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Apr 12, 2011 Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline RENESAS Package code PRSS0003AF-A) (Package name TO-220FL) C 1. Gate 2. Collector G 3. Emitter 1 2 3 E Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to emitter voltage VCES 360 V Gate to emitter voltage VGES 30 V Collector current Ic 35 A Collector peak current ic(peak) Note1 200 A Collector dissipation PC Note2 25 W Junction to case thermal impedance j-c 5 C/ W Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Notes 1.... See More ⇒

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