All Transistors. Equivalents Search

View r07ds0421ej rjk5012dpp detailed specification:

Preliminary Datasheet RJK5012DPP-M0 R07DS0421EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching May 31, 2011 Features Low on-resistance RDS(on) = 0.515 typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0003AF-A (Package name TO-220FL) D 1. Gate 2. Drain G 3. Source 1 2 3 S Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDSS 500 V Gate to source voltage VGSS 30 V Drain current IDNote4 12 A Drain peak current ID (pulse)Note1 24 A Body-drain diode reverse drain current IDR 12 A Body-drain diode reverse drain peak current IDR (pulse)Note1 24 A Avalanche current IAPNote3 4 A Avalanche energy EARNote3 0.88 mJ Channel dissipation Pch Note2 30 W Channel to case thermal impedance ch-c 4.17 C/W Chan... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 r07ds0421ej rjk5012dpp.pdf Design, MOSFET, Power

 r07ds0421ej rjk5012dpp.pdf RoHS Compliant, Service, Triacs, Semiconductor

 r07ds0421ej rjk5012dpp.pdf Database, Innovation, IC, Electricity