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Preliminary Datasheet RJK5014DPP-E0 R07DS0607EJ0100 500V - 19A - MOS FET Rev.1.00 High Speed Power Switching Feb 03, 2012 Features Low on-resistance RDS(on) = 0.325 typ. (at ID = 9.5 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0003AG-A (Package name TO-220FP) D 1. Gate 2. Drain G 3. Source 1 S 2 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDSS 500 V Gate to source voltage VGSS 30 V Drain current IDNote4 19 A Drain peak current ID (pulse)Note1 38 A Body-drain diode reverse drain current IDR 19 A Body-drain diode reverse drain peak current IDR (pulse)Note1 38 A Avalanche current IAPNote3 4 A Avalanche energy EARNote3 0.88 mJ Channel dissipation Pch Note2 35 W Channel to case thermal impedance ch-c 3.57 C/W Ch... See More ⇒

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