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View ruh40e12c detailed specification:

RUH40E12C N-Channel Advanced Power MOSFET Features Pin Description 40V/12A, RDS (ON) =17m (Typ.)@VGS=10V D RDS (ON) =24m (Typ.)@VGS=4.5V Uses Ruichips Advanced SGTTM Technology Ultra Low On-Resistance Very Fast Switching G ESD protected Lead Free and Green Devices (RoHS Compliant) S SOT23-3 D Applications Load Switch Power Management G Synchronous rectification S N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25 C Unless Otherwise Noted) VDSS Drain-Source Voltage 40 V VGSS Gate-Source Voltage 20 TJ Maximum Junction Temperature 150 C TSTG Storage Temperature Range -55 to 150 C IS Diode Continuous Forward Current TA=25 C 12 A Mounted on Large Heat Sink TA=25 C 48 A IDP 300 s Pulse Drain Current Tested TA=25 C 12 A ID Continuous Drain Current(... See More ⇒

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