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View stu10l01 std10l01 detailed specification:

Gre r r P Pr Pr Pro STU/D10L01 a S mHop Microelectronics C orp. Ver 1.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 10A 100V 213 @ VGS=10V TO-252 and TO-251 Package. G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK (TA=25 C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Units Limit VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage 20 V TC=25 C 10 A a ID Drain Current-Continuous TC=70 C 8 A b IDM A -Pulsed 29 d EAS mJ Single Pulse Avalanche Energy 11 TC=25 C 50 W a PD Maximum Power Dissipation TC=70 C W 32 Operating Junction and Storage TJ, TSTG Temperature Range -55 to 150 C THERMAL CHARACTERISTICS a R 2.5 JC Thermal Resistance, Junction-to-Case ... See More ⇒

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