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View stu10n10 std10n10 detailed specification:

stu10n10_std10n10stu10n10_std10n10

STU10N10 Green Product STD10N10 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 620 @ VGS=10V TO-252 and TO-251 Package. 100V 5A 721 @ VGS=4.5V G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK (TC=25 C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Units Limit VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage 20 V TC=25 C 5 A c ID Drain Current-Continuous TC=70 C 4 A ac IDM A -Pulsed 14 d EAS Single Pulse Avalanche Energy 4 mJ TC=25 C 42 W PD Maximum Power Dissipation TC=70 C 27 W Operating Junction and Storage TJ, TSTG Temperature Range -55 to 150 C THERMAL CHARACTERISTICS R Thermal Resistance, Junction-to-Ca... See More ⇒

 

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 stu10n10 std10n10.pdf Design, MOSFET, Power

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