View stu10n10 std10n10 datasheet:

STU10N10GreenProductSTD10N10aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.620 @ VGS=10VTO-252 and TO-251 Package.100V 5A721 @ VGS=4.5VGGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 251 I - PAK(TC=25C unless otherwise noted)ABSOLUTE MAXIMUM RATINGSSymbol Parameter UnitsLimitVDSDrain-Source Voltage 100 VVGS Gate-Source Voltage 20 VTC=25C 5 AcID Drain Current-ContinuousTC=70C 4 AacIDM A-Pulsed 14dEAS Single Pulse Avalanche Energy 4 mJTC=25C 42 WPD Maximum Power DissipationTC=70C 27 WOperating Junction and StorageTJ, TSTG Temperature Range -55 to 150 CTHERMAL CHARACTERISTICSRThermal Resistance, Junction-to-Ca

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