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View 2n4400-2n4401 detailed specification:

2N4400/4401 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR TO-92 Collector-Emitter Voltage VCEO= 40V Collector Dissipation PC (max)=625mW ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Collector Current IC 600 mA Collector Dissipation PC 625 mW Junction Temperature TJ 150 Storage Temperature TSTG -55 150 1.Emitter 2.Base 3. Collector ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Typ Max Unit 60 Collector-Base Breakdown Voltage BVCBO IC=100 , IE=0 Collector-Emitter Breakdown Voltage BVCEO IC=1mA, IB=0 40 V V Emitter-Base Breakdown Voltage BVEBO IE=100 , IC=0 6 nA Collector Cut-off Current ICEX VCE=35V, VEB=0.4V 100 DC Current Gain hFE 2N4401 VCE=1V, IC=0.1mA 20 2N4400 VCE... See More ⇒

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