View 2n4400-2n4401 datasheet:

2N4400/4401 NPN EPITAXIAL SILICON TRANSISTORGENERAL PURPOSE TRANSISTORTO-92 Collector-Emitter Voltage: VCEO= 40V Collector Dissipation: PC (max)=625mWABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 60 VCollector-Emitter Voltage VCEO 40 VEmitter-Base Voltage VEBO 6 VCollector Current IC 600 mACollector Dissipation PC 625 mWJunction Temperature TJ 150 Storage Temperature TSTG -55 ~ 1501.Emitter 2.Base 3. CollectorELECTRICAL CHARACTERISTICS (T =25 )ACharacteristic Symbol Test Conditions Min Typ Max Unit60 Collector-Base Breakdown Voltage BVCBO IC=100 , IE=0Collector-Emitter Breakdown Voltage BVCEO IC=1mA, IB=0 40 VV Emitter-Base Breakdown Voltage BVEBO IE=100 , IC=0 6nA Collector Cut-off Current ICEX VCE=35V, VEB=0.4V100DC Current Gain hFE:2N4401 VCE=1V, IC=0.1mA20:2N4400 VCE

Keywords - ALL TRANSISTORS DATASHEET

 2n4400-2n4401.pdf Design, MOSFET, Power

 2n4400-2n4401.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2n4400-2n4401.pdf Database, Innovation, IC, Electricity