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View 2n5401 detailed specification:

2N5401 PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 Collector-Emitter Voltage VCEO= 150V Collector Dissipation PC (max)=625mW ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -160 V Collector-Emitter Voltage VCEO -150 V Emitter-Base Voltage VEBO -5 V Collector Current IC -600 mA Collector Dissipation PC 625 mW Junction Temperature TJ 150 Storage Temperature TSTG -55 150 1.Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Typ Max Unit -160 Collector-Base Breakdown Voltage BVCBO IC= -100 , IE=0 V Collector-Emitter Breakdown Voltage BVCEO IC= -1mA, IB=0 -150 V V Emitter-Base Breakdown Voltage BVEBO IE= -10 , IC=0 -5 Collector Cut-off Current ICBO VCB= -120V, IE=0 nA -50 Emitter Cut-off Current nA IEBO VEB= -3V, IC=0 -50 ... See More ⇒

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