View 2n5401 datasheet:

2N5401 PNP EPITAXIAL SILICON TRANSISTORAMPLIFIER TRANSISTORTO-92 Collector-Emitter Voltage: VCEO= 150V Collector Dissipation: PC (max)=625mWABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO -160 VCollector-Emitter Voltage VCEO -150 VEmitter-Base Voltage VEBO -5 VCollector Current IC -600 mACollector Dissipation PC 625 mWJunction Temperature TJ 150 Storage Temperature TSTG -55 ~ 1501.Emitter 2. Base 3. CollectorELECTRICAL CHARACTERISTICS (T =25 )ACharacteristic Symbol Test Conditions Min Typ Max Unit-160 Collector-Base Breakdown Voltage BVCBO IC= -100 , IE=0 VCollector-Emitter Breakdown Voltage BVCEO IC= -1mA, IB=0 -150 VV Emitter-Base Breakdown Voltage BVEBO IE= -10 , IC=0 -5 Collector Cut-off Current ICBO VCB= -120V, IE=0 nA-50 Emitter Cut-off Current nAIEBO VEB= -3V, IC=0-50

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