All Transistors. Equivalents Search

View bd135 bd137 bd139 detailed specification:

BD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND TO-126 SWITCHING APPLICATIONS Complement to BD136, BD138 and BD140 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage BD135 VCBO 45 V BD137 60 V BD139 80 V Collector Emitter Voltage BD135 VCEO 45 V BD137 60 V BD139 80 V 1. Emitter 2.Collector 3.Base Emitter Base Voltage VEBO 5 V Collector Current (DC) IC 1.5 A Collector Current (Pulse) IC 3.0 A Base Current IB 0.5 A Collector Dissipation (TC=25 ) PC 12.5 W Collector Dissipation (TA=25 ) PC 1.25 W Junction Temperature TJ 150 Storage Temperature TSTG - 55 150 ELECTRICAL CHARACTERISTICS (TC=25 ) Characteristic Symbol Test Condition Min Typ Max Unit Collector Emitter Sustaining Voltage BD135 VCEO(sus) IC = 30mA, IB = 0 45 V BD137 60 V BD139 80 V Collector C... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 bd135 bd137 bd139.pdf Design, MOSFET, Power

 bd135 bd137 bd139.pdf RoHS Compliant, Service, Triacs, Semiconductor

 bd135 bd137 bd139.pdf Database, Innovation, IC, Electricity