bd135 bd137 bd139.pdf datasheet:

BD135/137/139 NPN EPITAXIAL SILICON TRANSISTORMEDIUM POWER LINEAR ANDTO-126SWITCHING APPLICATIONS Complement to BD136, BD138 and BD140 respectivelyABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector Base Voltage : BD135 VCBO 45 V : BD137 60 V : BD139 80 V Collector Emitter Voltage : BD135 VCEO 45 V : BD137 60 V : BD139 80 V 1. Emitter 2.Collector 3.Base Emitter Base Voltage VEBO 5 V Collector Current (DC) IC 1.5 A Collector Current (Pulse) IC 3.0 A Base Current IB 0.5 A Collector Dissipation (TC=25 ) PC 12.5 W Collector Dissipation (TA=25 ) PC 1.25 W Junction Temperature TJ 150 Storage Temperature TSTG - 55 ~ 150 ELECTRICAL CHARACTERISTICS (TC=25 )Characteristic Symbol Test Condition Min Typ Max Unit Collector Emitter Sustaining Voltage : BD135 VCEO(sus) IC = 30mA, IB = 0 45 V : BD137 60 V : BD139 80 V Collector C