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View irf634a detailed specification:

Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 0.45 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 250V Lower RDS(ON) 0.327 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 250 Continuous Drain Current (TC=25 o ) C 8.1 ID A o C Continuous Drain Current (TC=100 ) 5.1 IDM Drain Current-Pulsed A 1 32 O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ 205 O IAR Avalanche Current 8.1 A 1 O EAR Repetitive Avalanche Energy 1 7.4 mJ O dv/dt Peak Diode Recovery dv/dt 3 4.8 V/ns O Total Power Dissipation (TC=25 oC ) 74 W PD Linear Derating Factor W/ o 0.59 C Operating Junction a... See More ⇒

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