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View irf634a datasheet:

irf634airf634a

Advanced Power MOSFETFEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 0.45 Rugged Gate Oxide Technology Lower Input CapacitanceID = 8.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V Lower RDS(ON) : 0.327 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V250Continuous Drain Current (TC=25 o )C 8.1IDAoCContinuous Drain Current (TC=100 )5.1IDM Drain Current-Pulsed A1 32OVGS Gate-to-Source Voltage _ VEAS Single Pulsed Avalanche Energy 2 mJ205OIAR Avalanche Current 8.1 A1OEAR Repetitive Avalanche Energy 17.4 mJOdv/dt Peak Diode Recovery dv/dt 34.8 V/nsOTotal Power Dissipation (TC=25 oC )74 WPDLinear Derating Factor W/ o0.59 COperating Junction a

 

Keywords - ALL TRANSISTORS DATASHEET

 irf634a.pdf Design, MOSFET, Power

 irf634a.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irf634a.pdf Database, Innovation, IC, Electricity

 

 
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