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View 2sa1016 2sc2362 2sc2362k detailed specification:

Ordering number ENN572E PNP/NPN Epitaxial Planar Silicon Transistors 2SA1016, 1016K/2SC2362, 2362K High-Voltage Low-Noise Amp Applications Package Dimensions unit mm 2003B [2SA1016, 1016K/2SC2362, 2362K] 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 2 3 1 Emitter ( ) 2SA1016, 1016K 2 Collecor 3 Base Specifications 1.3 1.3 SANYO NP Absolute Maximum Ratings at Ta = 25 C 2SA1016K, Parameter Symbol 2SA1016, 2SC2362 Unit Conditions 2SC2362K Collector-to-Base Voltage VCBO ( )120 ( )150 V Collector-to-Emitter Voltage VCEO ( )100 ( )120 V Emitter-to-Base Voltage VEBO ( )5 V Collector Current IC ( )50 mA Collector Current (Pulse) ICP ( )100 mA Collector Dissipation PC 400 mW Junction Temperature Tj 125 C Storage Temperature Tstg 55 to +125 C Electrical Characteristics at Ta = 25 C Ratings Parameter Symbol Conditions Unit min typ max C... See More ⇒

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