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View 2sa1831 detailed specification:

Ordering number EN3686A PNPTriple Diffused Planar Silicon Transistors 2SA1831 High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage (VCEO min= 800V). unit mm Small Cob (Cob typ=1.6pF). 2010B High reliabirity (Adoption of HVP processes). [2SA1831] JEDEC TO-220AB E Emitter EIAJ SC-46 C Collector B Base Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 800 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 7 V Collector Current IC 20 mA Collector Current (Pulse) ICP 60 mA Collector Dissipation PC 1.75 W Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C Electrical Characteristics at Ta = 25 C Ratings Parameter Symbol Conditions Unit min typ max ... See More ⇒

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