View 2sa1831 datasheet:

Ordering number:EN3686APNPTriple Diffused Planar Silicon Transistors2SA1831High-Voltage Amplifier,High-Voltage Switching ApplicationsFeatures Package Dimensions High breakdown voltage (VCEO min=800V).unit:mm Small Cob (Cob typ=1.6pF).2010B High reliabirity (Adoption of HVP processes).[2SA1831]JEDEC : TO-220AB E : EmitterEIAJ : SC-46 C : CollectorB : BaseSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO 800 VCollector-to-Emitter Voltage VCEO 800 VEmitter-to-Base Voltage VEBO 7 VCollector Current IC 20 mACollector Current (Pulse) ICP 60 mACollector Dissipation PC 1.75 WJunction Temperature Tj 150 CStorage Temperature Tstg 55 to +150 CElectrical Characteristics at Ta = 25CRatingsParameter Symbol Conditions Unitmin typ max

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