All Transistors. Equivalents Search

View 2sa608 2sc536n detailed specification:

Ordering number ENN6324 PNP/NPN Epitaxial Planar Silicon Transistors 2SA608N/2SC536N Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Capable of being used in the low frequency to high unit mm frequency range. 2164 [2SA608N/2SC536N] 4.5 Features 3.7 3.5 Large current capacity and wide ASO. 0.45 0.5 1.27 0.45 0.44 1 2 3 1 Emitter 2.5 2.5 2 Collector ( ) 2SA608N 3 Base SANYO NPA-WA Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ( 50)60 V Collector-to-Emitter Voltage VCEO ( )50 V Emitter-to-Base Voltage VEBO ( )6 V Collector Current IC ( )150 mA Collector Current (Pulse) ICP ( )400 mA Collector Dissipation PC 500 mW Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C Electrical Characteris... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 2sa608 2sc536n.pdf Design, MOSFET, Power

 2sa608 2sc536n.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sa608 2sc536n.pdf Database, Innovation, IC, Electricity