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S2N7002K 115mA, 60V N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product SOT-23 A Suffix of -C specifies halogen & lead-free A L 3 3 Top View C B FEATURES 1 1 2 3 DRAIN 2 Low on resistance. K E Fast switching speed. D Low-voltage drive. 1 H J F G GATE * Easily designed drive circuits. Easy to parallel. * Gate Millimeter Millimeter REF. REF. Pretection Min. Max. Min. Max. Pb-Free package is available. Diode A 2.70 3.04 G - 0.18 ESD protected 2000V SOURCE 2 B 2.10 2.80 H 0.40 0.60 C 1.20 1.60 J 0.08 0.20 D 0.89 1.40 K 0.6 REF. E 1.78 2.04 L 0.85 1.15 DEVICE MARKING RK F 0.30 0.50 MAXIMUM RATINGS (TA = 25 C unless otherwise specified) PARAMETER SYMBOL RATING UNIT Drain Source Voltage VDSS 60 V Gate Source Voltage VGSS 20 V Continuous ID 115 mA ... See More ⇒

 

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