View s9018t detailed specification:
S9018T NPN Plastic-Encapsulate Transistors RoHS Compliant Product TO-92 A suffix of "-C" specifies halogen & lead-free 4.55 0.2 3.5 0.2 FEATURE Power dissipation o P CM 0.4 W (Tamb= 2 5 C) Collector current CM 0.05 A I 0.43+0.08 0.07 Collector-base voltage 46+0.1 0. 0.1 V(BR)CBO 25 V (1.27 Typ.) Operating and storage junction temperature range 1 Emitter +0.2 1.25 0.2 2 Base 1 2 3 stg Tj, T -55 oC to +150 oC 3 Collector 2.54 0.1 o ELECTRICAL CHARACTERISTICS (Tamb=25 C unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR) 25 V CBO Ic= 100 A, I =0 E Collector-emitter breakdown voltage V(BR) Ic= 0. 1mA, I =0 18 V CEO B Emitter-base breakdown voltage V(BR) 4 V EBO I = 100 A, I =0 E C Collector cut-off current ICBO VCB= 20V, IE=0 0.1 A Collect... See More ⇒
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s9018t.pdf Design, MOSFET, Power
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