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View 2n2907aua detailed specification:

SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907AUA Low Power, High Speed Saturated Switching Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage -60V VCEO Collector Emitter Voltage -60V VEBO Emitter Base Voltage -5V IC Continuous Collector Current -600mA PD TA = 25 C Total Power Dissipation at 500mW Derate Above 37.5 C 3.08mW/ C TJ Junction Temperature Range -65 to +200 C Tstg Storage Temperature Range -65 to +200 C THERMAL PROPERTIES (Each Device) Symbols Parameters Min. Typ. Max. Units R JA Thermal Resistance, Junction To Ambient 325 C/W Semelab Limited reserves the right to change test conditions, parameter limits and pac... See More ⇒

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