View hfp18n50u datasheet:

Apr 2014 BVDSS = 500 V RDS(on) typ = 0.22 HFP18N50U ID = 18 A 500V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 58 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) 0.22 GS=10V 100% Avalanche Tested Absolute Maximum Ratings TC=25 unless otherwise specified Symbol Parameter Value Units VDSS Drain-Source Voltage 500 V Drain Current Continuous (TC = 25 ) 18 A ID Drain Current Continuous (TC = 100 ) 11.4 A IDM Drain Current Pulsed (Note 1) 72 A VGS Gate-Source Voltage 30 V EAS Single Pulsed Avalanche Energy (Note 2) 950 mJ IAR Avalanche Current (Note 1) 18 A EAR Repetitive Avalanche Energy (Note 1) 23.6 mJ dv/d... See More ⇒

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