View hfp18n50u datasheet:

Apr 2014BVDSS = 500 VRDS(on) typ = 0.22 HFP18N50U ID = 18 A500V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 58 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.22 GS=10V 100% Avalanche TestedAbsolute Maximum Ratings TC=25 unless otherwise specifiedSymbol Parameter Value UnitsVDSS Drain-Source Voltage 500 VDrain Current Continuous (TC = 25 ) 18 AIDDrain Current Continuous (TC = 100 ) 11.4 AIDM Drain Current Pulsed (Note 1) 72 AVGS Gate-Source Voltage 30 VEAS Single Pulsed Avalanche Energy (Note 2) 950 mJIAR Avalanche Current (Note 1) 18 AEAR Repetitive Avalanche Energy (Note 1) 23.6 mJdv/d

Keywords - ALL TRANSISTORS DATASHEET

 hfp18n50u.pdf Design, MOSFET, Power

 hfp18n50u.pdf RoHS Compliant, Service, Triacs, Semiconductor

 hfp18n50u.pdf Database, Innovation, IC, Electricity