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2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage 2N2222 60 VCBO V 2N2222A 75 Collector Emitter Voltage 2N2222 30 VCEO V 2N2222A 40 Emitter Base Voltage 2N2222 5 VEBO V 2N2222A 6 Collector Current IC 600 mA Power Dissipation Ptot 625 mW O Junction Temperature Tj 150 C O Storage Temperature Range Tstg - 55 to + 150 C SEMTECH ELECTRONICS LTD. Dated 12/08/2016 Rev 02 2N2222 / 2N2222A O Characteristics at Ta = 25 C Parameter Symbol Min. Max. Unit DC Current Gain at ... See More ⇒

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