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2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage 2N2222 60 VCBO V 2N2222A 75 Collector Emitter Voltage 2N2222 30 VCEO V 2N2222A 40 Emitter Base Voltage 2N2222 5 VEBO V 2N2222A 6 Collector Current IC 600 mAPower Dissipation Ptot 625 mWOJunction Temperature Tj 150 C OStorage Temperature Range Tstg - 55 to + 150 C SEMTECH ELECTRONICS LTD. Dated : 12/08/2016 Rev:02 2N2222 / 2N2222A OCharacteristics at Ta = 25 C Parameter Symbol Min. Max. UnitDC Current Gain at