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2SA1015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, L , according to its DC current gain. As complementary type the NPN transistor 2SC1815 is recommended. 1. Emitter 2. Collector 3. Base TO-92 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 50 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 150 mA Base Current -IB 50 mA Power Dissipation Ptot 400 mW O Junction Temperature Tj 150 C O Storage Temperature Range Tstg - 55 to + 150 C O Characteristics at Ta = 25 C Parameter Symbol Min. Max. Unit DC Current Gain at -VCE = 6 V, -IC = 2 mA Current Gain Group O hFE 70 140 - Y hFE 120 240 - G hFE 200 400 - L hFE 350 700 - at -VCE = 6 V,... See More ⇒

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