View 2sa1015o 2sa1015y 2sa1015g 2sa1015l datasheet:

2SA1015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, L , according to its DC current gain. As complementary type the NPN transistor 2SC1815 is recommended. 1. Emitter 2. Collector 3. Base TO-92 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 50 VCollector Emitter Voltage -VCEO 50 VEmitter Base Voltage -VEBO 5 VCollector Current -IC 150 mABase Current -IB 50 mAPower Dissipation Ptot 400 mWOJunction Temperature Tj 150 C OStorage Temperature Range Tstg - 55 to + 150 C OCharacteristics at Ta = 25 C Parameter Symbol Min. Max. Unit DC Current Gain at -VCE = 6 V, -IC = 2 mA Current Gain Group O hFE 70 140 - Y hFE 120 240 - G hFE 200 400 - L hFE 350 700 - at -VCE = 6 V,

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