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View 2sa200-y 2sa200-o detailed specification:

ST 2SA200 PNP Silicon Epitaxial Planar Transistor for general purpose and switching amplifier The transistor is subdivided into two group, O and Y according to its DC current gain. 1. Emitter 2. Collector 3. Base TO-92 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit 60 V Collector Base Voltage -VCBO 50 V Collector Emitter Voltage -VCEO Emitter Base Voltage -VEBO 5 V Collector Current -IC 500 mA Base Current -IB 100 mA Power Dissipation Ptot 625 mW O Junction Temperature Tj 150 C O Storage Temperature Range Tstg - 55 to + 150 C O Characteristics at Ta = 25 C Parameter Symbol Min. Typ. Max. Unit DC Current Gain at -VCE = 2 V, -IC = 50 mA Current Gain Group O hFE 70 - 140 - Y hFE 120 - 240 - at -VCE = 6 V, -IC = 400 mA hFE 25 - - - Collector Base Cutoff Current -ICBO - - 100 nA at -VCB = 50 V ... See More ⇒

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