View 2sa200-y 2sa200-o datasheet:

ST 2SA200 PNP Silicon Epitaxial Planar Transistor for general purpose and switching amplifier The transistor is subdivided into two group, O and Y according to its DC current gain. 1. Emitter 2. Collector 3. Base TO-92 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit60 VCollector Base Voltage -VCBO 50 VCollector Emitter Voltage -VCEO Emitter Base Voltage -VEBO 5 VCollector Current -IC 500 mABase Current -IB 100 mAPower Dissipation Ptot 625 mWOJunction Temperature Tj 150 C OStorage Temperature Range Tstg - 55 to + 150 C OCharacteristics at Ta = 25 C Parameter Symbol Min. Typ. Max. UnitDC Current Gain at -VCE = 2 V, -IC = 50 mA Current Gain Group OhFE 70 - 140 - Y hFE 120 - 240 - at -VCE = 6 V, -IC = 400 mA hFE 25 - - - Collector Base Cutoff Current -ICBO - - 100 nA at -VCB = 50 V

Keywords - ALL TRANSISTORS DATASHEET

 2sa200-y 2sa200-o.pdf Design, MOSFET, Power

 2sa200-y 2sa200-o.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sa200-y 2sa200-o.pdf Database, Innovation, IC, Electricity