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View st2sd882u-p detailed specification:

ST 2SD882U-P NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in medium power linear and switching applications TO-126 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit 120 V Collector Base Voltage VCBO 100 V Collector Emitter Voltage VCES 100 V Collector Emitter Voltage VCEO Emitter Base Voltage VEBO 6 V Collector Current IC 4 A Collector Peak Current ICM 7 A Base Current IB 1 A O Power Dissipation at TA = 25 C PD 1.25 mW O Power Dissipation at TC = 25 C PD 36 mW O Operating and Storage Temperature Range TStg - 65 to + 150 C O Characteristics at Ta = 25 C Parameter Symbol Min. Max. Unit DC Current Gain at VCE = 1 V, IC = 500 mA hFE 100 260 - at VCE = 1 V, IC = 2 A hFE 15 - - at VCE = 2 V, IC = 1 A hFE 100 260 - at VCE = 5 V, IC = 10 mA hFE 15 - - Collector Base Cutoff Curren... See More ⇒

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