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ST TIP122 NPN Silicon Power Darlington Transistor for power switching and amplifier applications TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit 100 V Collector Base Voltage VCBO 100 V Collector Emitter Voltage VCEO 5 V Emitter Base Voltage VEBO 5 A Collector Current IC 8 A Collector Current (Pulse) ICP 0.12 A Base Current IB O 2 W Power Dissipation (Ta = 25 C) PC O Power Dissipation (Tc = 25 C) PC 65 W O Junction Temperature Tj 150 C O Storage Temperature Range Tstg - 65 to + 150 C O Characteristics at Ta = 25 C Parameter Symbol Min. Max. Unit DC Current Gain hFE 1000 - - at VCE = 3 V, IC = 0.5 A hFE 1000 - - at VCE = 3 V, IC = 3 A Collector Base Cutoff Current ICBO - 0.2 mA at VCB = 100 V Collector Emitter Cutoff Current ICEO - 0.5 mA at VCE = 50 V Emitter Base Cutoff Curre... See More ⇒

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