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ST TIP122 NPN Silicon Power Darlington Transistor for power switching and amplifier applications TO-220 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit100 VCollector Base Voltage VCBO 100 VCollector Emitter Voltage VCEO 5 VEmitter Base Voltage VEBO 5 ACollector Current IC 8 ACollector Current (Pulse) ICP 0.12 ABase Current IB O2 WPower Dissipation (Ta = 25 C) PC OPower Dissipation (Tc = 25 C) PC 65 WOJunction Temperature Tj 150 C OStorage Temperature Range Tstg - 65 to + 150 C OCharacteristics at Ta = 25 C Parameter Symbol Min. Max. UnitDC Current Gain hFE 1000 - - at VCE = 3 V, IC = 0.5 A hFE 1000 - - at VCE = 3 V, IC = 3 A Collector Base Cutoff Current ICBO - 0.2 mAat VCB = 100 V Collector Emitter Cutoff Current ICEO - 0.5 mAat VCE = 50 V Emitter Base Cutoff Curre