View d882 detailed specification:
Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-126 Plastic-Encapsulate Transistors TO-126 D882 TRANSISTOR ( NPN ) FEATURES Power dissipation 1. EMITTER PCM 1.25 W ( Tamb=25 ) 2. COLLECTOR 3. BASE 1 2 3 MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 3 A PD Total Device Dissipation 1.25 W TJ Junction Temperature 150 Tstg Junction and Storage Temperature -55-150 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ELECTRICAL CHARACTERISTICS(Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=100uA ,IE=0 40 V Collector... See More ⇒
Keywords - ALL TRANSISTORS SPECS
d882.pdf Design, MOSFET, Power
d882.pdf RoHS Compliant, Service, Triacs, Semiconductor
d882.pdf Database, Innovation, IC, Electricity
